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Current research focuses on wide band gap semiconductor growth, thin film device fabrication, hetereojunction multiple quantum well devices, quantum dots, piezoelectric strain effects, and substrate and device characterization.
• Preparation of Complex FE and FM oxides and investigation of their structural and magnetoelectrical properties for device applications
Source of Support: Office of Naval Research
• GaN-Based Vertical Cavity Surface Emitting Lasers and Resonant Cavity Light Emitting Diodes
Source of Support: National Science Foundation
• Investigation of Fundamental Processes Involved in GaN based HFET Reliability
Source of Support: Air Force Office of Scientific Research
• Characterization of Impurity/Point Defect Complexes in Semiconductors by STEM
Source of Support: University of Wisconsin / Dept of Defense
• Growth and optical properties of Nonpolar m-plane GaN on patterned Si and sapphire substrates
Source of Support: National Science Foundation
• Advanced Nitride Heterostructures Based X-Band GaN HEMTs
Source of Support: Kyma Technologies, Inc. / Dept of Defense
• GaN-based HEMT epitaxial wafers on semi-insulating bulk GaN substrates
Source of Support: Kyma Technologies, Inc. / Dept of Defense
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