Current research focuses on wide band gap semiconductor growth, thin film device fabrication, hetereojunction multiple quantum well devices, quantum dots, piezoelectric strain effects, and substrate and device characterization.

• Preparation of Complex FE and FM oxides and investigation of their structural and magnetoelectrical properties for device applications

Source of Support: Office of Naval Research

• GaN-Based Vertical Cavity Surface Emitting Lasers and Resonant Cavity Light Emitting Diodes

Source of Support: National Science Foundation

• Investigation of Fundamental Processes Involved in GaN based HFET Reliability

Source of Support: Air Force Office of Scientific Research

• Characterization of Impurity/Point Defect Complexes in Semiconductors by STEM

Source of Support: University of Wisconsin / Dept of Defense

• Growth and optical properties of Nonpolar m-plane GaN on patterned Si and sapphire substrates

Source of Support: National Science Foundation

• Advanced Nitride Heterostructures Based X-Band GaN HEMTs

Source of Support: Kyma Technologies, Inc. / Dept of Defense

• GaN-based HEMT epitaxial wafers on semi-insulating bulk GaN substrates

Source of Support: Kyma Technologies, Inc. / Dept of Defense