09/08/2009
m-plane non-polar GaN on Si

The two papers about the m-plane non-polar GaN on Si have been published online (APL 95, 111102 & APL 95, 101106). Both are among the top 20 most downloaded articles during the publication month. These two papers demonstrated the superiority of nonpolar m-plane InGaN for light emitting applications in terms of internal quantum efficiency as compared to its polar counterpart, and also the feasibility of realizing the m-plane GaN growth on relatively inexpensive and more abundantly available Si substrates.  

 Article link:

 Nonpolar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition

 http://scitation.aip.org.proxy.library.vcu.edu/getabs/servlet/GetabsServlet?prog=normal&id=APPLAB000095000011111102000001&idtype=cvips&gifs=yes”

 Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN

http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=APPLAB000095000010101106000001&idtype=cvips&gifs=yes”>