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Xianfeng Ni
601 W. Main Street
Richmond, VA 23284
TEL.: (804)827-7010
Fax: (804)828-4269
Email: nix@vcu.edu |
Research Interests: Study of efficiency droop in InGaN light emitting diodes (LEDs), MOCVD epitaxy of non-polar nitrides on patterned sapphire and silicon, epitaxy of vertical-cavity surface emitting diodes (VCSELs)
Education:
- Ph. D. candidate (from August 2004) in Electrical Engineering, Virginia Commonwealth University, Richmond, VA
- M. S. - 2004 in Semiconductor materials, Zhejiang University,
Hangzhou, P.R. China
- B. S. - 2001 in Materials science, Zhejiang University, Hangzhou,
P.R. China
Description:
Recent publications:
X. Ni, M. Wu, J. Lee, X. Li, A. A. Baski, Ü. Özgür, and H. Morkoç, "Non-polar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition", Applied Physics Letters, 95, 111102 (2009). - Among top 20 most downloaded articles during the publication month
X. Ni, M. Wu, R. Shimada, X. Li, J. H. Leach, A. A. Baski, Ü. Özgür, and H. Morkoç, Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN, Applied Physics Letters, 95, 101106 (2009). - Among top 20 most downloaded articles during the publication month
X. Ni, Q. Fan, R. Shimada, Ü. Özgür, and H. Morkoç, Reduction of efficiency droop in InGaN light-emitting-diodes by coupled quantum wells, Applied Physics Letters, 93, 171113 (2008). Highlighted in CompoundSemiconductor.net (Nov. 20, 2008), Semiconductor Today online (Vol. 3, issue 9, Nov. 2008).
X. Ni, R. Shimada, T. D. Kang, J. Leach, Ü. Özgür, and H. Morkoç, GaN-based vertical cavities with crack-free high-reflectivity patterned AlGaN/GaN distributed Bragg reflectors, Phys. Status Solidi A 206, No. 2, 367370 (2009).
X. Ni, Ü. Özgür, A. A. Baski, and H. Morkoç, L. Zhou and David J. Smith, C. A. Tran, Epitaxial lateral overgrowth of (11-22) semi-polar GaN on (1-100) m-plane sapphire by metalorganic chemical vapor deposition, Applied Physics Letters, 90, 182109 (2007).
X. Ni, Ü. Özgür, and H. Morkoç, Z. Liliental-Weber, H. O. Everitt, Epitaxial lateral overgrowth of a-plane GaN by metalorganic chemical vapor deposition, Journal of Applied Physics. 102, 053506 (2007).
X. Ni, Ü. Özgür, Y. Fu, N. Biyikli, J. Xie, A. A. Baski, and H. Morkoç, Defect reduction in (11-20) a-plane GaN by two-stage epitaxial lateral overgrowth, Applied Physics Letters, 89, 262105 (2006).
X. Ni, Y. Fu, Y. T. Moon, N. Biyikli, H. Morkoç, Optimization of (11-20) a-plane GaN growth by MOCVD on (1-102) r-plane sapphire, Journal of Crystal Growth, 290, 166 (2006).
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